By D. Crawley, K. Nikolic, M. Forshaw
It's turning into more and more transparent that the two-dimensional format of units on desktop chips is commencing to prevent the advance of high-performance computers. 3-dimensional constructions may be had to give you the functionality required to enforce computationally in depth initiatives. three-D Nanoelectronic laptop structure and Implementation reports the state-of-the-art in nanoelectronic machine layout and fabrication and discusses the architectural elements of 3-D designs, together with the prospective use of molecular wiring and carbon nanotube interconnections. it is a helpful reference for these all for the layout and improvement of nanoelectronic units and know-how.
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Additional resources for 3D Nanoelectronic Computer Architecture and Implementation (Series in Materials Science and Engineering)
Data buses and data rates for single off-layer data connection (left) and for multiple through-layer data connections (right). run at ∼1 MHz, the total power dissipation of these extra CMOS devices would also be quite small. 3. Note that, although the devices are not specified, the assumed dimensions of the chips (16 mm by 13 mm) ‘force’ the device sizes to be quite small: 20 nm × 20 nm. This is not a fundamental constraint. It would be quite possible, for example to use much larger layer sizes—for example, 160 mm by 130 mm.
The advantage of this approach is that it uses only a single silicon wafer and it is, therefore, very much cheaper than the other techniques described here and is compatible with a standard semiconductor fabrication process. The disadvantages are that the TFTs are slower than conventional MOS transistors and the problem of heat dissipation remains. The possiblity of faulty devices may be handled by using fault tolerant techniques. 4 Stacked chips using connections across the area of chips In this approach, vertical interconnections between layers in the stack are made over the whole area of each chip in the stack.
16. The figure shows a number of memory banks connected via a crossbar switch to the machine registers. The crossbar connects memory bank data lines to machine registers. Several registers may be loaded from (or have their contents stored into) main memory in a single cycle. The load and store addresses are generated in the usual way from the machine registers. Common addressing modes are register-plus-displacement and registerplus-index: the first consists of adding the contents of a register to a constant (defined in the instruction) whilst the second consists of adding the contents of two registers.